BAV756DW
Document number: DS30148 Rev. 9 - 2
1 of 3
www.diodes.com
April 2008
? Diodes Incorporated
BAV756DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Features
?
Fast Switching Speed
?
Ultra-Small Surface Mount Package
?
For General Purpose Switching Applications
?
High Conductance
?
One BAV70 Circuit and One BAW56 Circuit In One Package
?
Easily Connected As Full Wave Bridge
?
Lead Free/RoHS Compliant (Note 3)
?
"Green" Device (Notes 4 and 5)
Mechanical Data
?
Case: SOT-363
?
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminals: Solderable per MIL-STD-202, Method 208
?
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
?
Polarity: See Diagram
?
Marking Information: See Page 2
?
Ordering Information: See Page 2
?
Weight: 0.006 grams (approximate)
SOT-363
C1
A2
A1
A
1
C2
C2
TOP VIEW
Internal SchematicTOP VIEW
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current (Notes 1 and 2)
IFM
300
mA
Average Rectified Output Current (Notes 1 and 2)
IO
150
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
2.0
1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Notes 1 and 2)
PD
200
mW
Power Dissipation TS
= 60
°C (Note 2)
PD
300 mW
Thermal Resistance Junction to Ambient Air (Notes 1 and 2)
RθJA
625
°C/W
Thermal Resistance Junction to Soldering Point (Note 2)
RθJS
275
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
75
?
V
IR
= 2.5
μA
Forward Voltage
VF
?
0.715
0.855
1.0
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Reverse Current (Note 6)
IR
?
2.5
50
30
25
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= 150
°C
VR
= 25V, T
J
= 150
°C
VR
= 20V
Total Capacitance
CT
?
2.0
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0
ns
IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad
layout, which can be found on our website at
http://www.di
odes.com/datasheets/ap02001.pdf.
2. One or more diodes loaded.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2O3
Fire Retardants.
6. Short duration pulse test used to minimize self-heating effect.
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